US Patent Issued to Applied Materials on Sept. 9 for "Silicon oxide gap fill using capacitively coupled plasmas" (California Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,741, issued on Sept. 9, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Silicon oxide gap fill using capacitively coupled plasmas" was invented by Madhu Santosh Kumar Mutyala (Santa Clara, Calif.), Deenesh Padhi (Sunnyvale, Calif.) and Hang Yu (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary deposition methods may include introducing a precursor into a processing region of a semiconductor processing chamber via a faceplate of the semiconductor processing chamber. The methods may include flowing an oxygen-containing precursor into the processing region from beneath a pedestal of the semiconductor processing c...