US Patent Issued to Applied Materials on Sept. 30 for "Self-aligned double patterning with spatial atomic layer deposition" (California Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,361, issued on Sept. 30, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Self-aligned double patterning with spatial atomic layer deposition" was invented by Ning Li (San Jose, Calif.), Victor Nguyen (Novato, Calif.), Mihaela Balseanu (Sunnyvale, Calif.), Li-Qun Xia (Cupertino, Calif.), Keiichi Tanaka (San Jose, Calif.) and Steven D. Marcus (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber s...