US Patent Issued to Applied Materials on Sept. 30 for "Selective etching between silicon-and-germanium-containing materials with varying germanium concentrations" (California Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,360, issued on Sept. 30, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Selective etching between silicon-and-germanium-containing materials with varying germanium concentrations" was invented by Jiayin Huang (Fremont, Calif.), Zihui Li (Santa Clara, Calif.), Anchuan Wang (San Jose, Calif.) and Nitin K. Ingle (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary semiconductor processing methods may include providing a pre-treatment precursor to a processing region of a semiconductor processing chamber. A first layer of silicon-and-germanium-containing material and a second layer of silicon-and-germanium-containi...