US Patent Issued to Applied Materials on Sept. 23 for "Techniques and device structures based upon directional dielectric deposition and bottom-up fill" (Massachusetts, California Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,422,210, issued on Sept. 23, was assigned to Applied Materials Inc..

"Techniques and device structures based upon directional dielectric deposition and bottom-up fill" was invented by M. Arif Zeeshan (Manchester-by-the-sea, Mass.), Tristan Y. Ma (Lexington, Mass.) and Kelvin Chan (San Ramon, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component). In some embodiments, a method may include providing a plurality of device structures extending from a base, each of the plurality of device structures including a first sidewall opposit...