US Patent Issued to APPLIED MATERIALS on Sept. 23 for "Silicon (Si) dry etch for die-to-wafer thinning" (Singaporean Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,446, issued on Sept. 23, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).

"Silicon (Si) dry etch for die-to-wafer thinning" was invented by Guan Huei See (Singapore), ChangBum Yong (Singapore), Prayudi Lianto (Singapore), Cheng Sun (Singapore) and Arvind Sundarrajan (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of thinning a die engaged with a substrate is disclosed, utilizing dry etching of a top surface of the die with a plasma comprising fluorine to selectively remove the top surface of the die relative to a top surface of the substrate."

The patent was filed on Dec. 21, 2022, under Application No. 18/086,150....