US Patent Issued to Applied Materials on Sept. 23 for "Selective implantation into STI of ETSOI device" (New York, Massachusetts Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,482, issued on Sept. 23, was assigned to Applied Materials Inc..

"Selective implantation into STI of ETSOI device" was invented by Qintao Zhang (Mt Kisco, N.Y.) and Wei Zou (Lexington, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are approaches for forming a shallow trench isolation (STI) to improve extremely thin silicon on insulator (ETSOI) device performance. In one approach, a method may include providing a device stack comprising a buried oxide (BOX) layer in a substrate, patterning a hardmask over the substrate, and forming a plurality of isolation regions in the device stack, wherein the plurality of isolation region...