ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,416,863, issued on Sept. 16, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Dry develop process of photoresist" was invented by Yuqiong Dai (Santa Clara, Calif.), Madhur Sachan (Belmont, Calif.), Regina Freed (Los Altos, Calif.) and Hoyung David Hwang (Cupertino, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed...