US Patent Issued to Applied Materials on Oct. 7 for "Low temperature selective etching of silicon nitride using microwave plasma" (Singaporean, American Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,005, issued on Oct. 7, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Low temperature selective etching of silicon nitride using microwave plasma" was invented by Thai Cheng Chua (Cupertino, Calif.), Christian Valencia (Alhambra, Calif.), Doreen Yong (Singapore), Tuck Foong Koh (Singapore), Jenn-Yue Wang (Fremont, Calif.) and Philip Allan Kraus (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include a method of etching a 3D structure. In an embodiment, the method comprises providing the 3D structure in a microwave plasma chamber. In an embodiment, the 3D structure comprises a substrate, an...