US Patent Issued to Applied Materials on Oct. 28 for "Methods for forming deep trench isolation structures" (California Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,646, issued on Oct. 28, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Methods for forming deep trench isolation structures" was invented by Taichou Papo Chen (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for forming a deep trench isolation (DTI) structure with only two interfaces. In some embodiments, a method of forming a deep trench isolation structure may include etching a trench with a high aspect ratio into a substrate material, repairing the surfaces of the trench from damage caused by etching of the trench, growing an epitaxial layer on the surfaces of the trench to form a homogeneous passivation re...