US Patent Issued to Applied Materials on Oct. 28 for "Bottom contact formation for 4F 2 vertical DRAM" (New York, Massachusetts Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,731, issued on Oct. 28, was assigned to Applied Materials Inc..

"Bottom contact formation for 4F 2 vertical DRAM" was invented by Sipeng Gu (Clifton Park, N.Y.), Qintao Zhang (Mt Kisco, N.Y.) and Kyu-Ha Shim (Andover, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are approaches for forming contacts in a 4F2 vertical dynamic random-access memory device. One method includes providing a plurality of fins extending from a substrate, forming a spacer layer over the plurality of fins, and etching the substrate to expose a base portion of the plurality of fins. The method may include forming a doped layer along the base portion of t...