US Patent Issued to Applied Materials on Oct. 21 for "PECVD of SiBN thin films with low leakage current" (California Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,345, issued on Oct. 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"PECVD of SiBN thin films with low leakage current" was invented by Chuanxi Yang (Los Altos, Calif.), Hang Yu (Woodland, Calif.), Sanjay Kamath (Fremont, Calif.), Deenesh Padhi (Sunnyvale, Calif.), Honggun Kim (San Jose, Calif.), Euhngi Lee (Santa Clara, Calif.), Zubin Huang (Santa Clara, Calif.), Diwakar N. Kedlaya (San Jose, Calif.), Rui Cheng (Santa Clara, Calif.) and Karthik Janakiraman (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Capacitor devices containing silicon boron nitride with high boron concentration are provided. In one or more ex...