ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,605, issued on Oct. 14, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).
"Epitaxial methods including a haloborane formula for growing boron-containing structures having increased boron concentrations" was invented by Xuebin Li (Sunnyvale, Calif.), Sathya Chary (San Francisco) and Joe Margetis (Gilbert, Ariz.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present invention generally relate to methods of epitaxially growing boron-containing structures. In an embodiment, a method of depositing a structure comprising boron and a Group IV element on a substrate is provided. The method includes heating the substrate at a t...