US Patent Issued to APPLIED MATERIALS on Nov. 4 for "Three-dimensional dynamic random-access memory (3D DRAM) gate all-around (GAA) design using stacked Si/SiGe" (California, Massachusetts Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,702, issued on Nov. 4, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).

"Three-dimensional dynamic random-access memory (3D DRAM) gate all-around (GAA) design using stacked Si/SiGe" was invented by Sony Varghese (Manchester-by-the-Sea, Mass.) and Fredrick David Fishburn (Aptos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming a three-dimensional dynamic random-access memory (3D DRAM) structure are provided herein. In some embodiments, a method of forming a 3D DRAM structure includes forming at least one wordline feature in a first stack comprising a plurality of crystalline silicon (c-Si) layers alternating with a...