ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,046, issued on Nov. 4, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Silicon-and-germanium etching" was invented by Anchuan Wang (San Jose, Calif.), Jiayin Huang (Fremont, Calif.) and Kalpana Suen (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary methods of semiconductor processing may include providing a first fluorine-containing precursor to a remote plasma system of a semiconductor processing chamber. The methods may include generating plasma effluents of the first fluorine-containing precursor in the remote plasma system. The methods may include providing plasma effluents of the first fluorine-containing ...