ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,716, issued on Nov. 4, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"NAND cell structure with charge trap cut" was invented by Chang Seok Kang (Santa Clara, Calif.), Tomohiko Kitajima (San Jose, Calif.), Gill Yong Lee (San Jose, Calif.), Balasubramanian Pranatharthiharan (San Jose, Calif.) and Mukund Srinivasan (Fremont, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Described is a memory device including a plurality of memory cells formed around a memory hole extending through a memory stack on a substrate. Each of the plurality of memory cells comprises a discrete blocking oxide layer, a charge trap layer, and a tunnel oxide...