US Patent Issued to Applied Materials on Nov. 4 for "Method for etching high aspect ratio structures" (California Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,053, issued on Nov. 4, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Method for etching high aspect ratio structures" was invented by Feng Qiao (Santa Clara, Calif.), Hailong Zhou (Santa Clara, Calif.), Qian Fu (Santa Clara, Calif.), Sangjun Park (Santa Clara, Calif.), Jayoung Choi (Santa Clara, Calif.), Radhe Agarwal (Santa Clara, Calif.) and Tong Liu (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and system for etching high aspect ratio structures in a semiconducting processing chamber are disclosed herein. In one example, a method of patterning a substrate comprises etching the substrate to form a rec...