US Patent Issued to APPLIED MATERIALS on Nov. 18 for "Growth of thin oxide layer with silicon nitride and conversion" (California Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,473,644, issued on Nov. 18, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).

"Growth of thin oxide layer with silicon nitride and conversion" was invented by Fredrick Fishburn (Aptos, Calif.), Hao Zhang (San Diego), Zhijun Chen (San Jose, Calif.), Johanes Swenberg (Los Gatos, Calif.), Christopher S. Olsen (Fremont, Calif.), Hansel Lo (San Jose, Calif.), Kristopher Mikael Koskela (San Jose, Calif.), Hoi-Sung Chung (Sunnyvale, Calif.), Chang Seok Kang (San Jose, Calif.) and Raghuveer Satya Makala (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming an oxide layer includes forming a protective interlayer oxide...