US Patent Issued to Applied Materials on Nov. 18 for "Directional selective fill for silicon gap fill processes" (California Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,105, issued on Nov. 18, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Directional selective fill for silicon gap fill processes" was invented by Taiki Hatakeyama (Cupertino, Calif.), Bhargav S. Citla (Fremont, Calif.), Qiang Ma (Cupertino, Calif.), Biao Liu (San Jose, Calif.) and Srinivas D. Nemani (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary processing methods may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature within the...