ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,687, issued on Nov. 11, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Plasma processing chambers configured for tunable substrate and edge sheath control" was invented by Rajinder Dhindsa (Pleasanton, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein provide plasma processing chambers and methods configured for fine-tuning and control over a plasma sheath formed during the plasma-assisted processing of a semiconductor substrate. Embodiments include a sheath tuning scheme, including plasma processing chambers and methods, which can be used to tailor one or more characteristics of a plasma sheath formed between ...