US Patent Issued to Applied Materials on Nov. 11 for "Ion implantation for reduced hydrogen incorporation in amorphous silicon" (California, Massachusetts Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,700, issued on Nov. 11, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Ion implantation for reduced hydrogen incorporation in amorphous silicon" was invented by Rui Cheng (San Jose, Calif.), Rajesh Prasad (Lexington, Mass.), Karthik Janakiraman (San Jose, Calif.), Gautam K. Hemani (San Jose, Calif.), Krishna Nittala (San Jose, Calif.), Shan Tang (Middleton, Mass.) and Qi Gao (Wilmington, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary methods of semiconductor processing may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by a first amount of...