US Patent Issued to Applied Materials on Nov. 11 for "Horizontal GAA nano-wire and nano-slab transistors" (California, New Jersey Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,322, issued on Nov. 11, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Horizontal GAA nano-wire and nano-slab transistors" was invented by Benjamin Colombeau (San Jose, Calif.) and Hans-Joachim Gossmann (Summit, N.J.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a doped semiconductor material between source regions and drain regions of the device. The method includes doping semiconductor material layers between source regions and drain regions of an electronic device."

The patent was filed on Sept. 29, 2022, under Applicati...