ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,736, issued on May 27, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Methods of highly selective silicon oxide removal" was invented by Lala Zhu (Fremont, Calif.), Shi Che (Sunnyvale, Calif.), Dongqing Yang (Pleasanton, Calif.) and Nitin K. Ingle (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor processing method may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include an exposed region of silicon-and-oxygen-containing material. The substrate may include an expo...