US Patent Issued to Applied Materials on May 27 for "Method and apparatus for etching a semiconductor substrate in a plasma etch chamber" (California Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,732, issued on May 27, was assigned to Applied Materials Inc..

"Method and apparatus for etching a semiconductor substrate in a plasma etch chamber" was invented by Daisuke Shimizu (Milpitas, Calif.), Li Ling (Santa Clara, Calif.), Hikaru Watanabe (Santa Clara, Calif.) and Kenji Takeshita (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and apparatus for etching a substrate in a plasma etch chamber are provided. In one example, the method includes exposing a substrate disposed on a substrate supporting surface of a substrate support to a plasma within a processing chamber, and applying a voltage waveform to an electrode di...