US Patent Issued to Applied Materials on May 27 for "Isotropic silicon nitride removal" (Singaporean, American Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,739, issued on May 27, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Isotropic silicon nitride removal" was invented by Mikhail Korolik (San Jose, Calif.), Paul E. Gee (San Jose, Calif.), Wei Ying Doreen Yong (Singapore), Tuck Foong Koh (Singapore), John Sudijono (Singapore), Philip A. Kraus (San Jose, Calif.) and Thai Cheng Chua (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precur...