ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,724, issued on May 27, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Helium-free silicon formation" was invented by Zeqiong Zhao (Santa Clara, Calif.), Allison Yau (Mountain View, Calif.), Sang-Jin Kim (San Jose, Calif.), Akhil Singhal (Portland, Ore.), Zhijun Jiang (San Jose, Calif.), Deenesh Padhi (Sunnyvale, Calif.) and Ganesh Balasubramanian (Fremont, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary deposition methods may include delivering a silicon-containing precursor and an inert gas to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor ...