US Patent Issued to Applied Materials on May 20 for "Method of reducing titanium nitride etching during tungsten film formation" (California Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,305,278, issued on May 20, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Method of reducing titanium nitride etching during tungsten film formation" was invented by Kedi Wu (Fremont, Calif.), Chenfei Shen (San Jose, Calif.), Chi-Chou Lin (San Jose, Calif.), Ilanit Fisher (San Jose, Calif.), Shih Chung Chen (Cupertino, Calif.), Mandyam Sriram (San Jose, Calif.) and Srinivas Gandikota (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming electronic devices comprising tungsten film stacks are provided. Methods include forming a tungsten nucleation layer on the barrier layer using an atomic layer deposition ...