US Patent Issued to Applied Materials on May 20 for "Ion implantation to increase MOSFET threshold voltage" (New York, Massachusetts Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,237, issued on May 20, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Ion implantation to increase MOSFET threshold voltage" was invented by Qintao Zhang (Mt Kisco, N.Y.), Samphy Hong (Saratoga Springs, N.Y.) and Wei Zou (Lexington, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are methods for increasing MOSFET threshold voltage to enable higher SiC mobility. In some embodiments, a method includes providing a device structure including a dielectric layer over an epitaxial layer, patterning a hardmask layer over the dielectric layer, performing a first ion implant to form a well in the epitaxial layer, and perf...