US Patent Issued to Applied Materials on May 20 for "Ferroelectric tunnel junction devices with internal biases for long retention" (American, French Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,037, issued on May 20, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Ferroelectric tunnel junction devices with internal biases for long retention" was invented by Milan Pesic (Paoli, Pa.) and Bastien Beltrando (Marseilles, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric tunnel junction (FTJ) memory device may include a first electrode and a ferroelectric layer comprising ferroelectric dipoles that may generate a first electric field. The first electric field may be oriented in a first direction when the device operates in an ON state. The device may also include a barrier layer that may generate a depolarizing...