ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,501, issued on May 13, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Systems and methods for selective metal compound removal" was invented by Zhenjiang Cui (San Jose, Calif.) and Anchuan Wang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary etching methods may include flowing a fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor and the hydrogen-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents int...