US Patent Issued to APPLIED MATERIALS on May 13 for "Method and apparatus for low temperature selective epitaxy in a deep trench" (California Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,297,559, issued on May 13, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).

"Method and apparatus for low temperature selective epitaxy in a deep trench" was invented by Abhishek Dube (Fremont, Calif.), Xuebin Li (Sunnyvale, Calif.), Hua Chung (San Jose, Calif.) and Flora Fong-Song Chang (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure generally relate to methods for forming epitaxial layers on a semiconductor device. In one or more embodiments, methods include removing oxides from a substrate surface during a cleaning process, flowing a processing reagent containing a silicon source and...