ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,494, issued on May 13, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Ion implantation process to form punch through stopper" was invented by Yan Zhang (Westford, Mass.), Johannes M. van Meer (Middleton, Mass.) and Naushad K. Variam (Marblehead, Mass.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Approaches herein provide devices and methods for forming optimized gate-all-around transistors. One method may include forming a well by directing a first ion species into a substrate of a device, forming a plurality of alternating first and second layers over the well, and forming a dummy gate and a spacer over the plurality of alternatin...