US Patent Issued to Applied Materials on March 25 for "Tunability of dopant concentration in thin hafnium oxide films" (California Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,037, issued on March 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Tunability of dopant concentration in thin hafnium oxide films" was invented by Golnaz Karbasian (San Jose, Calif.) and Keith T. Wong (Los Gatos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of depositing thin films of hafnium oxide possessing strong ferroelectric properties are described. A hafnium oxide monolayer is formed in a first process cycle comprising sequential exposure of a substrate to a hafnium precursor, purge gas, first oxidant and purge gas. A doped hafnium oxide monolayer is formed in a second process cycle comprising sequential...