US Patent Issued to Applied Materials on March 25 for "Transistor devices with multi-layer interlayer dielectric structures" (California Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,226, issued on March 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Transistor devices with multi-layer interlayer dielectric structures" was invented by Yun-Chu Tsai (San Jose, Calif.), Dejiu Fan (Mountain View, Calif.), Jung Bae Kim (San Jose, Calif.), Yang Ho Bae (San Jose, Calif.), Rodney Shunleong Lim (Daly City, Calif.) and Dong Kil Yim (Pleasanton, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device includes a channel region, a first source/drain region adjacent to a first end of the channel region and a second source/drain region adjacent to a second end of the channel region, a gate structure dispo...