US Patent Issued to Applied Materials on March 25 for "Monolithic complementary field-effect transistors having carbon-doped release layers" (American, Belgian Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,559, issued on March 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Monolithic complementary field-effect transistors having carbon-doped release layers" was invented by Andrew Anthony Cockburn (Brabant-Wallon, Belgium), Vanessa Pena (Leuven, Belgium), Daniel Philippe Cellier (Wallonia, Belgium), John Tolle (Gilbert, Ariz.), Thomas Kirschenheiter (Tempe, Ariz.), Wei Hong (Dublin, Calif.), Ellie Y. Yieh (San Jose, Calif.), Mehul Naik (San Jose, Calif.) and Seshadri Ramaswami (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure advantageously provide semiconductor devices CFET in partic...