US Patent Issued to Applied Materials on March 25 for "Method of linearized film oxidation growth" (California Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,039, issued on March 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Method of linearized film oxidation growth" was invented by Christopher S. Olsen (Fremont, Calif.) and Tobin Kaufman-Osborn (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming an oxide layer over a semiconductor substrate are provided. The method includes forming a first oxide containing portion of the oxide layer over a semiconductor substrate at a first growth rate by exposing the substrate to a first gas mixture having a first oxygen percentage at a first temperature. A second oxide containing portion is formed over the substr...