US Patent Issued to Applied Materials on March 18 for "Method for depositing layers directly adjacent uncovered vias or contact holes" (Massachusetts Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,067, issued on March 18, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Method for depositing layers directly adjacent uncovered vias or contact holes" was invented by John Hautala (Beverly, Mass.) and Charith Nanayakkara (Gloucester, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are approaches for forming semiconductor device layers. One method may include forming a plurality of openings in a semiconductor structure, and forming a film layer atop the semiconductor structure by delivering a material at a non-zero angle relative to a normal extending perpendicular from an upper surface of the semiconductor structure....