ALEXANDRIA, Va., March 12 -- United States Patent no. 12,247,283, issued on March 11, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Method and apparatus for controlled ion implantation" was invented by Alexander K. Eidukonis (Amesbury, Mass.), Hans-Joachim L. Gossmann (Summit, N.J.), Dennis Rodier (Francestown, N.H.), Stanislav S. Todorov (Topsfield, Mass.), Richard White (Newmarket, N.H.), Wei Zhao (Lexington, Mass.), Wei Zou (Lexington, Mass.) and Supakit Charnvanichborikarn (Gloucester, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first pol...