ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,592, issued on June 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Deposition of silicon-based dielectric films" was invented by Geetika Bajaj (New Delhi), Prerna Sonthalia Goradia (Mumbai, India), Seshadri Ganguli (Sunnyvale, Calif.), Srinivas Gandikota (Santa Clara, Calif.), Robert Jan Visser (Menlo Park, Calif.) and Suraj Rengarajan (Bangalore, India).
According to the abstract* released by the U.S. Patent & Trademark Office: "A processing method comprises positioning a substrate in a processing chamber and setting a temperature of the substrate to a range of 50deg C. to 500deg C.; conducting an atomic layer deposition (ALD) cycle on the substrate; and repeat...