ALEXANDRIA, Va., June 25 -- United States Patent no. 12,338,547, issued on June 24, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).

"Method for forming silicon-phosphorous materials" was invented by Errol Antonio C. Sanchez (Tracy, Calif.), Mark J. Saly (Santa Clara, Calif.), Schubert Chu (San Francisco), Abhishek Dube (Fremont, Calif.) and Srividya Natarajan (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embod...