ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,038, issued on June 24, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Dynamic and localized temperature control for epitaxial deposition reactors" was invented by Sathya Shrinivas Chary (San Francisco) and Zhiyuan Ye (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method and apparatus for improving film growth uniformity on a semiconductor substrate. The film growth uniformity is improved by adjusting the amount of power provided to the substrate by spot heaters as the substrate is rotated. Therefore, the amount of power provided to the substrate by the spot heaters changes as the portion of the substrate being he...