ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,354, issued on June 17, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Sidewall passivation for plasma etching" was invented by Zhonghua Yao (Santa Clara, Calif.), Qian Fu (Pleasanton, Calif.), Aaron Eppler (Los Gatos, Calif.) and Mukund Srinivasan (Fremont, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary semiconductor processing methods may include depositing a boron-containing material on the substrate. The boron-containing material may extend along sidewalls of the one or more features in the substrate. The methods may include forming a plasma of an oxygen-containing precursor and contacting the substrate with plas...