US Patent Issued to Applied Materials on June 17 for "Integrated flowable low-k gap-fill and plasma treatment" (California, New York Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,337, issued on June 17, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Integrated flowable low-k gap-fill and plasma treatment" was invented by Myungsun Kim (Pleasanton, Calif.), Jingmei Liang (San Jose, Calif.), Martin J. Seamons (San Jose, Calif.), Michael Stolfi (Clifton Park, N.Y.) and Benjamin Colombeau (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, film densification by low temperature inductively coupled plasma (ICP) treatment (greater than600deg ...