US Patent Issued to Applied Materials on June 17 for "Indium-gallium-nitride light emitting diodes with light reflecting mirrors" (California, New York Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,336, issued on June 17, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Indium-gallium-nitride light emitting diodes with light reflecting mirrors" was invented by Michel Khoury (Santa Barbara, Calif.), Lan Yu (Albany, N.Y.), Michael Chudzik (Mountain View, Calif.) and Max Batres (Redwood City, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary processing methods of forming a semiconductor structure may include forming subpixels on a substrate. Each of the subpixels may include a gallium-and-nitrogen-containing layer formed on an exposed portion of a nucleation layer on the substrate. The subpixels may further include a p...