US Patent Issued to APPLIED MATERIALS on June 10 for "Void-free contact trench fill in gate-all-around FET architecture" (California Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,761, issued on June 10, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).

"Void-free contact trench fill in gate-all-around FET architecture" was invented by Nicolas Louis Breil (San Jose, Calif.), Byeong Chan Lee (San Jose, Calif.) and Benjamin Colombeau (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a contact trench structure in a semiconductor device, the method includes performing a first selective deposition process to form a contact on sidewalls of a trench, each of the sidewalls of the trench comprising a first cross section of a first material and a second cross section of a second materia...