US Patent Issued to APPLIED MATERIALS on July 8 for "Electrical contact cavity structure and methods of forming the same" (California, New York, Oregon Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,705, issued on July 8, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.).

"Electrical contact cavity structure and methods of forming the same" was invented by Nicolas Louis Breil (San Jose, Calif.), Lisa McGill (Hillsboro, Ore.), Manoj Vellaikal (Sunnyvale, Calif.), Bocheng Cao (Sunnyvale, Calif.), Pei Liu (Rexford, N.Y.) and Avgerinos V. Gelatos (Scotts Valley, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an electrical contact in a semiconductor structure includes performing a cavity shaping process on a semiconductor structures having an n-type metal oxide semiconductor (n-MOS) region and/or a p-type MOS (p-...