ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,586, issued on July 29, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Methods of TSV formation for advanced packaging" was invented by Peng Suo (Singapore), Ying W. Wang (Singapore), Guan Huei See (Singapore), Chang Bum Yong (Singapore) and Arvind Sundarrajan (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to through-via structures with dielectric shielding of interconnections for advanced wafer level semiconductor packaging. The methods described herein enable the formation of high thickness dielectric shielding layers within low aspect ratio through-via structures, thus facilitating thin an...