ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,299, issued on July 22, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Devices and methods for DRAM leakage reduction" was invented by Armin Saeedi Vahdat (Burlington, Mass.), John Hautala (Beverly, Mass.), Yan Zhang (Westford, Mass.) and Johannes M. van Meer (Middleton, Mass.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Approaches for reducing GIDL are disclosed. In one example, a method of forming a DRAM device may include forming a trench in a substrate layer, providing a first gate oxide layer along a sidewall and a bottom surface of the trench, and forming a first gate material within the trench. The method may further include...