US Patent Issued to Applied Materials on July 15 for "Graded superlattice structure for gate all around devices" (California Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,971, issued on July 15, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Graded superlattice structure for gate all around devices" was invented by Yi-Chiau Huang (Fremont, Calif.), Pierre Tomasini (Sunnyvale, Calif.) and Abhishek Dube (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Silicon germanium (SiGe)/silicon containing superlattice structures and methods for forming the same are provided. Various embodiments utilize SiGe layers in a SiGe/Si superlattice structure, which include varying concentrations of germanium throughout the layer. For example, in some embodiments, for each SiGe layer there is a core SiGe film...