US Patent Issued to Applied Materials on July 15 for "Formation of gate all around device" (California, New York Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,948, issued on July 15, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Formation of gate all around device" was invented by Myungsun Kim (Pleasanton, Calif.), Andy Lo (Saratoga, Calif.), Eric Davey (Mountain View, Calif.), Michael Stolfi (Clifton Park, N.Y.) and Benjamin Colombeau (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise an oxide layer and a semiconductor material layer between source regions and drain regions of the device. The method includes growing a conformal epitaxial layer on a nanosheet channel...