US Patent Issued to Applied Materials on July 1 for "Etch rate modulation of FinFET through high-temperature ion implantation" (American, Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,687, issued on July 1, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Etch rate modulation of FinFET through high-temperature ion implantation" was invented by Qintao Zhang (Mt Kisco, N.Y.), Rajesh Prasad (Lexington, Mass.) and Jun-Feng Lu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device may include forming a plurality of fins extending from a buried oxide layer, wherein a masking layer is disposed atop each of the plurality of fins, and performing a high-temperature ion implant to the semiconductor device. The method may further include performing an etch process to remove the maskin...